microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. TCS1200 1200 watts, 53 volts pulsed avionics at 1030 mhz general description the TCS1200 is a high power common base bipolar transistor. it is designed for pulsed systems at 1030 mhz, with the pulse width and duty required for tcas applications. the device has gold thin-film metalization and emitter ballasting for proven highest mttf. the transistor includes input and output prematch for broadband capability. low thermal resistance package reduces junction temper ature, extends life. case outline 55tu-1 absolute maximum ratings maximum power dissipation device dissipation @ 25 c 1 2095 w maximum voltage and current collector to base voltage (bv ces ) 65 v emitter to base voltage (bv ebo ) 3.5 v collector current (i c ) 60 a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power out pulse width = 32 s 1200 w p g power gain duty factor = 2% 10.2 db c collector efficiency 45 % r l return loss -10 db tr rise time 100 ns pd pulse droop 0.5 db vswr load mismatch tolerance 1 f = 1030 mhz, v cc = 53 volts pin = 115 watts 2.5:1 functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 40 ma 3.5 v bv ces collector to emitter breakdown ic = 100 ma 65 v h fe dc ? current gain vce = 5v, ic = 1a 20 jc 1 thermal resistance 0.10 c/w rev a january, 2009 notes: 1. at rated out put power and pulse conditions 2. see plots below for mode s data at 50v as well as the standard 32us,2% data at 53v
microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. TCS1200 32us,2% (1030mhz, 53v) 0 200 400 600 800 1000 1200 1400 1600 30 40 50 60 70 80 90 100 110 120 130 140 150 pin(w) pout(w) TCS1200 32us,2% (1030mhz, 53v) 8.00 8.50 9.00 9.50 10.00 10.50 30 40 50 60 70 80 90 100 110 120 130 140 150 pin(w) gain(db) TCS1200
microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. TCS1200 dimensions in inches
microsemi reserves the right to change, without notice, th e specifications and information contained herein. visit our web site at www.microsemi.com or contact our factory direct. TCS1200
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